Heat and mass tranfer in chemical vapor deposition of ZnSePOPOV, V. P.Heat transfer research. 1993, Vol 25, Num 3, pp 370-374, issn 1064-2285Article

Heat and man transfer in the vertical epitaxial reactor. II: Asymmetric heating of the reactorPOPOV, V. P.Inženerno-fizičeskij žurnal. 1989, Vol 57, Num 1, pp 23-27, issn 0021-0285, 5 p.Article

Heat and mass transfer in a vertical epitaxial reactor. I: Symmetric heating of the reactorPOPOV, V. P.Inženerno-fizičeskij žurnal. 1989, Vol 56, Num 6, pp 942-948, issn 0021-0285, 7 p.Article

Diffraction des ondes électromagnétiques sur un cylindre gyrotrope mince partiellement métalliséPOPOV, V. P.Radiotehnika i elektronika. 1983, Vol 28, Num 9, pp 1698-1703Article

Formirovanie Bengal'skogo fehnaPOPOV, V. P.Izvestiâ vysših učebnyh zavedenij. Geologiâ i razvedka. 1988, Num 4, pp 44-53, issn 0016-7762Article

Vliyanie vulkanizma Komorskogo arkhipelaga (Indijskij okean) na pozdnechetvertichnoe osadkoobrazovaniePOPOV, V. P.Izvestiâ vysših učebnyh zavedenij. Geologiâ i razvedka. 1987, Num 12, pp 29-35, issn 0016-7762Article

Thermal expansion of samarium-terbium orthoferrites in the spin reorientation rangeLOMAKO, I. D; POPOV, V. P.High Temperatures. High Pressures (Print). 1998, Vol 30, Num 5, pp 589-591, issn 0018-1544Conference Paper

Terrigenous-mineralogical provinces of recent bottom sediments on the continental margins in the Arabian Sea and the Gulf of AdenPOPOV, V. P; GERSANOVIC, D. Ye.Oceanology Washington. 1978, Vol 18, Num 2, pp 177-180Article

Transformation de phase cristal-état amorphe dans le silicium fortement dopéGRETTSSHEL, R; DVURECHENSKIJ, A. V; POPOV, V. P et al.Fizika tverdogo tela. 1986, Vol 28, Num 10, pp 3134-3136, issn 0367-3294Article

Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped siliconDVURECHENSKII, A. V; GROETZSCHEL, R; POPOV, V. P et al.Physics letters. A. 1986, Vol 116, Num 8, pp 399-402, issn 0375-9601Article

Structural and optical properties of high temperature-high pressure treated Si: HBAK-MISIUK, J; MISIUK, A; POPOV, V. P et al.Journal of alloys and compounds. 2004, Vol 382, pp 160-164, issn 0925-8388, 5 p.Conference Paper

Nanocrystalline ceramics based on the ZrO2-HfO2-Y2O3 systemPANOVA, T. I; GLUSHKOVA, V. B; LAPSHIN, A. V et al.Glass physics and chemistry. 2003, Vol 29, Num 1, pp 93-98, issn 1087-6596, 6 p.Article

Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structuresPOPOV, V. P; TIKHONOV, P. A; TOMAEV, V. V et al.Glass physics and chemistry. 2003, Vol 29, Num 5, pp 494-500, issn 1087-6596, 7 p.Article

Dielectric properties of perovskite solid solutions based on sodium metaniobate in the NaNbO3-LaNb3O9 systemPIVOVAROVA, A. P; STRAKHOV, V. I; POPOV, V. P et al.Refractories and industrial ceramics. 2002, Vol 43, Num 1-2, pp 36-39, issn 1083-4877Article

20-nm Resolution of electron lithography for the nano-devices on ultrathin SOI filmNASTAUSHEV, Y. V; GAVRILOVA, T; KACHANOVA, M et al.Materials science & engineering C. Biomimetic and supramolecular systems. 2002, Vol 19, Num 1-2, pp 189-192Conference Paper

Ion-beam-induced epitaxial crystallization of Si due to diffusion of point defects from crystalline and amorphous regions to the interphase boundarySTEPINA, N. P; KACHURIN, G. A; POPOV, V. P et al.Physica status solidi. A. Applied research. 1994, Vol 141, Num 2, pp 305-310, issn 0031-8965Article

Growth of single-crystal α-Si3N4 in buried layers formed by low-rate implantation of N+ ions in heated siliconKACHURIN, G. A; TYSCHENKO, I. V; PLOTNIKOV, A. E et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 8, pp 779-781, issn 0038-5700Article

Construction of moulds for electric discharge sintering of a diamond tool from powder composites on the base of Cu-SnSVECHKOV, A. V; BAIDENKO, A. A; POPOV, V. P et al.Poroškovaâ metallurgiâ (Kiev). 1991, Num 11, pp 78-82, issn 0032-4795Article

Investigatigations of MBE-grown superlattices with Sb delta-layers in silicon by Rutherford backscattering spectrometryLENKEIT, K; PIRRWITZ, A; NIKIFOROV, A. I et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 2, pp 523-532, issn 0031-8965Article

Thermal expansion and magnetic volume effect in Fe_82-xCr₁₈Ni_x alloysPECHERSKAYA, V. I; BOL'SHUTKIN, D. N; MASLOV, N. V et al.Metallofizika (Kiev). 1989, Vol 11, Num 3, pp 20-25, issn 0204-3580, 6 p.Article

Defects in supersaturated solid solution of arsenic in silicon at rapid thermal annealingPOPOV, V. P; DVURECHENSKII, A. V; KASHNIKOV, B. P et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 2, pp 569-572, issn 0031-8965Article

Etude de la structure de polyéthylène orienté dispersé dans une matrice de polypropèneKUPTSOV, S. A; ANTIPOV, E. M; REMIZOVA, A. A et al.Kolloidnyj žurnal. 1984, Vol 46, Num 4, pp 791-795, issn 0023-2912Article

Traps at the bonded SI/SIO2 interface in silicon-on-insulator structuresANTONOVA, I. V; STANO, J; NIKOLAEV, D. V et al.Proceedings - Electrochemical Society. 2003, pp 64-69, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Effect of high temperature: pressure on SOI structureMISIUK, A; BRYJA, L; BAK-MISIUK, J et al.Crystal engineering. 2002, Vol 5, Num 3-4, pp 155-161, issn 1463-0184, 7 p.Conference Paper

Thermal donor and oxygen precipitate formation in silicon during 450°C treatments under atmospheric and enhanced pressureANTONOVA, I. V; POPOV, V. P; PLOTNIKOV, A. E et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 4, pp 1575-1578, issn 0013-4651Article